JPH0379800B2 - - Google Patents
Info
- Publication number
- JPH0379800B2 JPH0379800B2 JP59038830A JP3883084A JPH0379800B2 JP H0379800 B2 JPH0379800 B2 JP H0379800B2 JP 59038830 A JP59038830 A JP 59038830A JP 3883084 A JP3883084 A JP 3883084A JP H0379800 B2 JPH0379800 B2 JP H0379800B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- memory cell
- transistor
- node
- cell section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59038830A JPS60185297A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
US06/659,191 US4630238A (en) | 1983-10-14 | 1984-10-09 | Semiconductor memory device |
EP91121355A EP0481532B1 (en) | 1983-10-14 | 1984-10-12 | Semiconductor memory device |
EP84306978A EP0147019B1 (en) | 1983-10-14 | 1984-10-12 | Semiconductor memory device |
DE3486418T DE3486418T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung |
DE8484306978T DE3486094T2 (de) | 1983-10-14 | 1984-10-12 | Halbleiterspeicheranordnung. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59038830A JPS60185297A (ja) | 1984-03-02 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60185297A JPS60185297A (ja) | 1985-09-20 |
JPH0379800B2 true JPH0379800B2 (en]) | 1991-12-19 |
Family
ID=12536142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59038830A Granted JPS60185297A (ja) | 1983-10-14 | 1984-03-02 | 不揮発性ランダムアクセスメモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60185297A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61113189A (ja) * | 1984-10-12 | 1986-05-31 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPS62256296A (ja) * | 1986-04-30 | 1987-11-07 | Fujitsu Ltd | 半導体不揮発性記憶装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2042296B (en) * | 1979-01-24 | 1983-05-11 | Xicor Inc | Nonvolatile static random access/memory device |
US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
-
1984
- 1984-03-02 JP JP59038830A patent/JPS60185297A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60185297A (ja) | 1985-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6064590A (en) | Non-volatile static random access memory device | |
JPH0568799B2 (en]) | ||
US4630238A (en) | Semiconductor memory device | |
JPH10106272A (ja) | 半導体記憶装置 | |
JPS6233672B2 (en]) | ||
US5148392A (en) | Semiconductor memory device | |
JPH0574948B2 (en]) | ||
US6404667B1 (en) | 2T-1C ferroelectric random access memory and operation method thereof | |
US5463235A (en) | Semiconductor memory comprising a memory cell without a transistor | |
JP2001093989A (ja) | 半導体装置 | |
JPS5813997B2 (ja) | メモリ・セル回路 | |
JP2000124418A (ja) | 半導体記憶装置 | |
JPH0379800B2 (en]) | ||
JPH0415556B2 (en]) | ||
JPH033315B2 (en]) | ||
JPH039559B2 (en]) | ||
US6271557B1 (en) | Center node for deep trench capacitors | |
JPH031759B2 (en]) | ||
JP2679718B2 (ja) | フローティングゲート型電界効果トランジスタを使用したメモリ回路 | |
JPH039560B2 (en]) | ||
JP2506159B2 (ja) | 半導体記憶装置 | |
JPH031760B2 (en]) | ||
JP2980463B2 (ja) | 半導体メモリ装置の駆動方法 | |
JPH05291534A (ja) | 電荷蓄積素子を有する半導体装置 | |
JPH0524673B2 (en]) |